| 2026 |
Zi-Hao Wang, Chun-Yu Lin, Liang-Jun Wang, Shi-Cheng Huang, Chiao-Yang Cheng, Shyh-Jer Huang, Yi-Chi Lee, Yan-Kuin Su, Performance Enhancement of AlGaN/GaN MS-HEMTs Via Synergistic Oxygen
Plasma Pre-treatment and TMA Surface Passivation, ISPlasma 2026/IC-PLANTS2026, Mar. 02-06, 2026, JPN日本 |
| 2025 |
黃士哲、陳昀、王子豪、蘇炎坤, Ag 上電極面積對 HfO₂/Al₂O₃/HfO₂ 三層結構 RRAM 操作電壓與切換均勻性之影響, 第二十三屆離島資訊技術與應用研討會(ITAOI), May. 29-31, 2026, TWN臺灣 |
| 2025 |
Shyh-Jer Huang, Tzy-Yu Shen, Yu-Chen Liu, Yung-Wei Chen, Chun-Yu Lin, Shi-Cheng Huang, Zi-
Hao Wang, Takashi Yoda, Takayuki Ohba, Meng-Chyi Wu, Yan-Kuin Su, Impact of Indium/Aluminum Composition on DC Performance of InAlN/GaN HEMTs on Silicon Substrates, 8th International Symposium on Growth of III-Nitrides, Nov. 09-12, 2025, TWN臺灣 |
| 2025 |
Ysui-Yu Hsieh, Jun-Wei Huang, Min-Han Li, Tzy-Yu Shen, Jian-Kai Chen, Chun-Yu Lin, Shi-
Cheng Huang, Rong-Ming Ko, Zi-Hao Wang, Shyh-Jer Huang, Yan-Kuin Su, Investigation of Normally-off InAlN/GaN HEMTs with Recessed Gate and p-type 𝐍𝐢𝐎𝐱 Gate Electrodes, 8th International Symposium on Growth of III-Nitrides, Nov. 09-12, 2025, TWN臺灣 |
| 2025 |
Shyh-Jer Huang, Tze-Yu Huang, Rong-Ming Ko, Zi-Hao Wang, Yan-Kuin Su, Performance Trade-offs in AlInN-HEMTs with Varying Al Composition, 第二十三屆離島資訊技術與應用研討會(ITAOI), May. 23-25, 2025, TWN臺灣 |
| 2025 |
Shi-Cheng Huang, Liang-Jyun Wang, Chun-Yu Lin, Zi-Hao Wang, Shyh-Jer Huang, Rong-Ming Ko, Yan-Kuin Su, An Investigation of HfxAl1-xO-based Gate Dielectric Used in Metal-Oxide-Semiconductor High Electron Mobility Transistor, ISPlasma2025/IC-PLANTS2025, Mar. 03-07, 2025, JPN日本 |
| 2025 |
Chun-Yu Lin, Liang-Jyun Wang, Shi-Cheng Huang, Zi-Hao Wang, Shyh-Jer Huang, Rong-Ming Ko, Yan-Kuin Su, Application of ALD-derived Al2O3/HfxAl1-xO Bilayer as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor, ISPlasma2025/IC-PLANTS2025, Mar. 03-07, 2025, JPN日本 |
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